Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties.

ABSTRACT: Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi-domain III-V/Si are hybrid structures, composed of bulk photo-active semiconductors with 2D topological semi-metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first-principle calculations, it is shown that the bi-domain III-V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo-generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection.

SUBMITTER: Chen L 

PROVIDER: S-EPMC8805590 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature