Nanometer-thick copper films with low resistivity grown on 2D material surfaces.

ABSTRACT: Thin Copper (Cu) films (15 nm) are deposited on different 2D material surfaces through e-beam deposition. With the assist of van der Waals epitaxy growth mode on 2D material surfaces, preferential planar growth is observed for Cu films on both MoS₂ and WSe₂ surfaces at room temperature, which will induce a polycrystalline and continuous Cu film formation. Relative low resistivity values 6.07 (MoS₂) and 6.66 (WSe₂) μΩ-cm are observed for the thin Cu films. At higher growth temperature 200 °C, Cu diffusion into the MoS₂ layers is observed while the non-sulfur 2D material WSe₂ can prevent Cu diffusion at the same growth temperature. By further increasing the deposition rates, a record-low resistivity value 4.62 μΩ-cm for thin C

SUBMITTER: Liu YW 

PROVIDER: S-EPMC8810854 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature