Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface.

ABSTRACT: Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. In this study, we present the investigation of electronic phenomena at the h-BN/GaN interface by means of contactless electroreflectance (CER) spectroscopy. This nondestructive method enables precise determination of

SUBMITTER: Zdanowicz E 

PROVIDER: S-EPMC8815035 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature