Interface engineering of Ta₃N₅ thin film photoanode for highly efficient photoelectrochemical water splitting.

ABSTRACT: Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta₃N₅ thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top interfaces of Ta₃N₅ thin film photoanode is still lacking. Here, we employ n-type In:GaN and p-type Mg:GaN to modify the bottom and top interfaces of Ta₃N₅ thin film photoanode, respectively. The obtained In:GaN/Ta₃N₅/Mg:GaN heterojunction photoanode shows enhanced bulk carrier separation capability and better injection efficiency at photoanode/electrolyte interface, which lead to a record-high applied bias photon

SUBMITTER: Fu J 

PROVIDER: S-EPMC8821563 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature