A three-terminal non-volatile ferroelectric switch with an insulator-metal transition channel.

ABSTRACT: Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO₂- a material that exhibits an electrically driven insulator-metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respec

SUBMITTER: Vaidya J 

PROVIDER: S-EPMC8828903 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature