Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition.

ABSTRACT: This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer grown using a conventional single-step growth, the double Ga2O3 layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow velocity at the surface, regardless of the dopant concentration distribution of the underlying layer. Furthermore, the electrical properties of the single Ga2O3 layer could be attributed to various scatter

SUBMITTER: Kim KH 

PROVIDER: S-EPMC8838345 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature