Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer.

ABSTRACT: We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which co

SUBMITTER: Wyborski P 

PROVIDER: S-EPMC8839711 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature