Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC.

ABSTRACT: Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H2 intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H2 time duration. The G peak thermal lineshift rates dω/dT showed that the H2 intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak dω/dT value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism respo

SUBMITTER: Sun L 

PROVIDER: S-EPMC8839960 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature