Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films.

ABSTRACT: In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum gallium oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration. It is observed that blue/green emission intensity strongly correlates with extended structural defects rather than the point defects frequently assumed. Bulk crystals or Si-doped films homoepitaxially grown on (010) β-Ga₂O₃ yield an intense dominant UV emission, while samples with extended structural defects, such as gallium oxide films grown on either (-201) β-Ga₂O₃ or sapphire, as well as thick aluminum gallium oxide films grown on either (010) β-Ga₂O₃ or sapphire, all show a very broad PL spe

SUBMITTER: Cooke J 

PROVIDER: S-EPMC8881628 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature