Improved spin-orbit torque induced magnetization switching efficiency by helium ion irradiation.

ABSTRACT: Increasing the efficiency of spin-orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switching current with helium ion irradiation, but previous researches are focused on its phenomenological changes only. Here, the authors observe the reduction of switching current and analyze its origins. The analyzed major reasons are improved spin Hall angle represented as the changed resistivity of heavy metal layer and the reduction of surface anisotropy energy at interface between heavy metal and ferromagnet. It is confirmed that almost linear relation between changed SHA and Pt resistivity by

SUBMITTER: An S 

PROVIDER: S-EPMC8891290 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature