Nanometer-Scale Lateral p-n Junctions in Graphene/α-RuCl₃ Heterostructures.

ABSTRACT: The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl₃, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p-n junctions. Our STM/STS results reveal that p-n junctions with a band offset of ∼0.6 eV can be achieved with widths of ∼3 nm, giving rise to electric fields of order 10⁸ V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for

SUBMITTER: Rizzo DJ 

PROVIDER: S-EPMC8915251 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature