Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide.

ABSTRACT: Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (V_a) as well as the injection current of gain section (I_g), were investigated by the Hakki-Paoli method. With the increase of V_a, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net moda

SUBMITTER: Qiao Z 

PROVIDER: S-EPMC8943184 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature