Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate.

ABSTRACT: To scale down semiconductor devices to a size less than the design rule of 10 nm, lithography using a carbon polymer hard-mask was applied, e.g., spin-on-carbon (SOC) film. Spin coating of the SOC film produces a high surface topography induced by pattern density, requiring chemical-mechanical planarization (CMP) for removing such high surface topography. To achieve a relatively high polishing rate of the SOC film surface, the CMP principally requires a carbon-carbon (C-C) bond breakage on the SOC film surface. A new design of CMP slurry evidently accomplished C-C bond breakage via transformation from a hard surface with strong C-C covalent bonds into a soft surface with a metal carbon complex (i.e., C=Fe=C bonds) during CMP, resulting in a remarkable increase in the rate of the SOC film s

SUBMITTER: Lee JM 

PROVIDER: S-EPMC8953943 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature