Chemical vapor deposition merges MoS₂ grains into high-quality and centimeter-scale films on Si/SiO₂.

ABSTRACT: Two-dimensional molybdenum disulfide (MoS₂) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS₂-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS₂ can be directly produced on Si/SiO₂ at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS₂ domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects com

SUBMITTER: Singh M 

PROVIDER: S-EPMC8982092 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature