Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers.

ABSTRACT: Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the

SUBMITTER: Yao Z 

PROVIDER: S-EPMC9000432 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature