High reactivity of H₂O vapor on GaN surfaces.

ABSTRACT: Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H₂O, O₂, N₂O, and NO gases. It was found that H₂O vapor has the highest reactivity on the surface despite its lower oxidation power. The adsorption behavior of H₂O was explained by the density functional molecular dynamic calculation including the spin state of the surfaces. Two types of adsorbed H₂O molecules were present on the (0001) (+c) surface: non-dissociatively adsorbed H₂O (physisorption), and dissociatively adsorbed H₂O (chemisorpt

SUBMITTER: Sumiya M 

PROVIDER: S-EPMC9004525 | biostudies-literature | 2022

REPOSITORIES: biostudies-literature