Improved resistive switching characteristics of a multi-stacked HfO₂/Al₂O₃/HfO₂ RRAM structure for neuromorphic and synaptic applications: experimental and computational study.

ABSTRACT: Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO₂/Al₂O₃/HfO₂) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. First, the microstructure of the fabricated TaN/HfO₂/Al₂O₃/HfO₂/ITO RRAM device was examined by the cross-sectional High-Resolution Transmission Electron Microscopy (HRTEM). Then, Energy Dispersive X-ray Spectroscopy (EDS) was performed to probe compositional mapping. The bipolar resistive switching mode of the device was confirmed through SET/RESET characteristic plots for 100 cycles as a function of applied biasing voltage. An endurance test was performed for 100 DC switching cycles @0.2 V wherein; data retention was found up to 10⁴ s. M

SUBMITTER: Khera EA 

PROVIDER: S-EPMC9008441 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature