Gap Opening in Double-Sided Highly Hydrogenated Free-Standing Graphene.

ABSTRACT: Conversion of free-standing graphene into pure graphane─where each C atom is sp³ bound to a hydrogen atom─has not been achieved so far, in spite of numerous experimental attempts. Here, we obtain an unprecedented level of hydrogenation (≈90% of sp³ bonds) by exposing fully free-standing nanoporous samples─constituted by a single to a few veils of smoothly rippled graphene─to atomic hydrogen in ultrahigh vacuum. Such a controlled hydrogenation of high-quality and high-specific-area samples converts the original conductive graphene into a wide gap semiconductor, with the valence band maximum (VBM) ∼ 3.5 eV below the Fermi level, as monitored by photoemission spectromicroscopy and confirmed by theoretical predictions. In fact, the calculated band structure unequivocally

SUBMITTER: Betti MG 

PROVIDER: S-EPMC9011389 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature