A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates.

ABSTRACT: Since the innovation of van der Waals heterostructures of 2D materials, the p-n junction diode, a building block of electronics and opto-electronics has been studied in various ways. To date most of them have been studied on SiO₂ or other oxide substrates, although the oxide substrates cause significant degradation of the 2D material's intrinsic properties and device performances. Whereas using hexagonal boron nitride (h-BN) as an underlying layer to the 2D materials is known to preserve their properties. Here we have carefully analyzed the electrical and opto-electrical properties of a p-WSe₂/n-WS₂ van der Waals heterojunction diode on SiO₂ and the h-BN substrates. Besides the usual enhancement of the field-effect mobility of WSe₂ and

SUBMITTER: Sharma PR 

PROVIDER: S-EPMC9033226 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature