High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness.

ABSTRACT: The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn-GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O₂ in sputtering atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy show that c-axis orientation of crystallites, Ga/Zn ratio and oxygen related defects depend substantially on the thickness of films. The 200-350 nm thick GZO films display low carrier concentration ∼10¹⁷ cm^-3, which increases to >10²⁰ cm^-3 for thicker films. The diodes fabricated with >500 nm thick GZO layers display non-rectifying behaviour, while those fabricated with 200-350 nm thick GZO layer

SUBMITTER: Mondal P 

PROVIDER: S-EPMC9033655 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature