Atomic layer deposition of rhodium and palladium thin film using low-concentration ozone.

ABSTRACT: Rhodium (Rh) and palladium (Pd) thin films have been fabricated using an atomic layer deposition (ALD) process using Rh(acac)₃ and Pd(hfac)₂ as the respective precursors and using short-pulse low-concentration ozone as the co-reactant. This method of fabrication does away with the need for combustible reactants such as hydrogen or oxygen, either as a precursor or as an annealing agent. All previous studies using only ozone could not yield metallic films, and required post treatment using hydrogen or oxygen. In this work, it was discovered that the concentration level of ozone used in the ALD process was critical in determining whether the pure metal film was formed, and whether the metal film was oxidized. By controlling the ozone concentration under a critical limit,

SUBMITTER: Zou Y 

PROVIDER: S-EPMC9034295 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature