Intriguing interfacial characteristics of the CS contact with MX₂ (M = Mo, W; X = S, Se, Te) and MXY ((X = Y) = S, Se, Te) monolayers.

ABSTRACT: Using (hybrid) first principles calculations, the electronic band structure, type of Schottky contact and Schottky barrier height established at the interface of the most stable stacking patterns of the CS-MX₂ (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) MS vdWH are investigated. The electronic band structures of CS-MX₂ and CS-MXY MS vdWH seem to be simple sum of CS, MX₂ and MXY monolayers. The projected electronic properties of the CS, MX₂ and MXY layers are well preserved in CS-MX₂ and CS-MXY MS vdWH. Their smaller effective mass (higher carrier mobility) render promising prospects of CS-WS₂ and CS-MoSeTe as compared to other MS vdWH in nanoelectronic and optoelectronic devices, such as a high efficiency sol

SUBMITTER: Khan H 

PROVIDER: S-EPMC9036409 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature