Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement.

ABSTRACT: The difference in resistive switching characteristics by modifying the device configuration provides a unique operating principle, which is essential for both fundamental studies and the development of future memory devices. Here, we demonstrate the poly(methyl methacrylate) (PMMA)-based resistive switching characteristics using four different combinations of electrode/electrolyte arrangement in the device geometry. From the current-voltage (I-V) measurements, all the PMMA-based devices revealed nonvolatile memory behavior with a higher ON/OFF resistance ratio (∼10⁵-10⁷). Significantly, the current conduction in the filament and resistive switching behavior depend majorly on the presence of Al electrode and electrochemically active silver (Ag) element in the PM

SUBMITTER: Krishnan K 

PROVIDER: S-EPMC9036540 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature