An artificial synaptic transistor using an α-In₂Se₃ van der Waals ferroelectric channel for pattern recognition.

ABSTRACT: Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations. In this work, we use multilayer α-In₂Se₃ to realize a ferroelectric channel semiconductor FET, i.e., FeS-FET, whose gate-triggered and polarization-induced resistive switching is then exploited to mimic an artificial synapse. The FeS-FET exhibits key signatures of a synapse such as excitatory and inhibitory postsynaptic current, potentiation/depression, and paired pulsed facilitation. Multiple stable conductance states obtained by tuning the device are then used as synaptic weights to demonstrate pattern recognition by invoking a hidden layer perceptron model. Detailed artificial neural network

SUBMITTER: Mohta N 

PROVIDER: S-EPMC9043574 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature