Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation.

ABSTRACT: Thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit a UV light response with limited sensitivity performance. By utilizing in situ interfacial hydrogen doping, it is demonstrated that the a-IGZO TFTs with the Al₂O₃ dielectric deposited by plasma-enhanced atomic layer deposition at room temperature (RT) have excellent photosensing performance, such as a photoresponsivity of over 6 × 10⁵ A W^-1 and a light to dark current ratio up to 10⁷. This is attributed to spontaneous interfac

SUBMITTER: Wang XL 

PROVIDER: S-EPMC9048488 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature