Theoretical study of a p-n homojunction SiGe field-effect transistor via covalent functionalization.

ABSTRACT: p-n homojunctions are superior to p-n heterojunctions in constructing nanoscale functional devices, owing to the excellent crystallographic alignment. We tune the electronic properties of monolayer siligene (SiGe) into p/n-type via the covalent functionalization of electrophilic/nucleophilic dopants, using ab initio quantum transport calculations. It is found that the n-type doping effect of K atoms is stronger than that of benzyl viologen (BV) molecule on the surface of SiGe monolayer, owing to the strong covalent interaction. Both of p-type 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)-adsorbed and n-type 4 K-adsorbed SiGe systems show enhanced optical absorption in the infrared region, indicating their promising applications in infrared optoelectronic devic

SUBMITTER: Zhao J 

PROVIDER: S-EPMC9049907 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature