Composite formation in CdSe:Cu2Se nanocrystal films, charge transport characteristics and heterojunction performance.
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ABSTRACT: The use of nanocrystals as materials for potential technological applications depends on tailoring their properties through intentional doping with external impurities. We have used a new technique to synthesize nanocrystal thin films of CdSe:Cu2Se containing different weight percentages (wt%) of Cu2Se. The films were deposited on glass substrates at room temperature by co-evaporation of CdSe and Cu2Se powder in nitrogen gas at a pressure larger than that required for conventional thin film deposition. The films consisted of nanograins of CdSe doped with Cu2Se (i.e., nanograins of Cd1-x Cu2(x)Se where x is the atom% of Cu2Se doped into CdSe) for lower wt% of Cu2Se, and nanocomposites of Cd1-x Cu2(x)Se and Cu2Se for higher wt% of Cu2Se. An energy band diagram built using the Anderson model was used for discussing the heterojunction characteristics of the junction between nanograins of Cd1-x Cu2(x)Se and Cu2Se. To investigate the usefulness of the nanocrystal thin films of CdSe:Cu2Se for practical applications, the I-V characteristics of p-p and p-n hetero-junctions formed by the films respectively with nanostructured films of similarly deposited Cu2Se and CdSe films were studied.
SUBMITTER: Babu NS
PROVIDER: S-EPMC9050001 | biostudies-literature | 2020 Feb
REPOSITORIES: biostudies-literature
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