Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk.

ABSTRACT: Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic and structural state. In most semiconductors interstitial hydrogen binds to defects and is known to be amphoteric, namely it can act either as a donor (H⁺) or an acceptor (H^-) of charge, nearly always counteracting the prevailing conductivity type. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets - the control of intrinsic bulk conduction that denies access to quantum surface transport, imposing severe thickness limits on the bulk. With electrons donated by a reversible binding of H⁺ ions to Te(Se) chalcogen

SUBMITTER: Deng H 

PROVIDER: S-EPMC9050701 | biostudies-literature | 2022 Apr

REPOSITORIES: biostudies-literature