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Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film.

ABSTRACT: In this study, the memory device of iron oxide (IO) nanoparticles (NPs) embedded in polyvinyl alcohol (PVA) demonstrates the bipolar resistive switching characteristics under an external electric field. The phase and magnetic properties of iron oxide nanoparticles change corresponding to its resistive states. At the high resistance state (HRS) of device, iron oxide nanoparticles are primarily in Fe₂O₃ phase and the ferromagnetism behavior is observed. In contrast, the iron oxide nanoparticles clustered by the bridging oxygen vacancies lead to mainly Fe₃O₄ phase and no hysteresis magnetic curve is observed at the low resistance state (LRS) of device. The results reveal that oxygen vacancies/ions in nanoparticles notably influence the resistance and magnetic behavior of nanocomposite thin films. Our study indicated that the magnetic NPs is high potential of multi-dimensional storage fields.

SUBMITTER: Nguyen HH

PROVIDER: S-EPMC9051151 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature

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Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film.

Nguyen Hai Hung HH Ta Hanh Kieu Thi HKT Park Sungkyun S Phan Thang Bach TB Pham Ngoc Kim NK

RSC advances 20200331 22

In this study, the memory device of iron oxide (IO) nanoparticles (NPs) embedded in polyvinyl alcohol (PVA) demonstrates the bipolar resistive switching characteristics under an external electric field. The phase and magnetic properties of iron oxide nanoparticles change corresponding to its resistive states. At the high resistance state (HRS) of device, iron oxide nanoparticles are primarily in Fe<sub>2</sub>O<sub>3</sub> phase and the ferromagnetism behavior is observed. In contrast, the iron ...[more]

PMID: 35492079

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Project description:The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE). A solution processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in an insulating polyvinyl alcohol (PVA) matrix and polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has been studied by using flexible polyethylene terephthalate (PET) substrates. The current-voltage (I-V) measurements of hybrid Al/ZnO-PVA/PEDOT:PSS/Al/flexible PET substrate device exhibited a non-volatile bistable resistive switching behaviour, which is attributed to the trapping, storage and transport of charges in the electronic states of the ZnO nanoparticles. The performance of hybrid device is significantly enhanced over control Al/PEDOT:PSS/Al and Al/ZnO-PVA/Al devices due the presence of PEDOT:PSS polymer. This PEDOT:PSS improves the performance of oxygen ions (holes) migration toward BE and protect back oxygen vacancies (electrons) migrate toward BE from ZnO-PVA composites which may reduces the leakage current, as a result, increased the 'ON state/OFF state' current ratio of 7.9 × 103 times. The fabricated hybrid device showed high ON/OFF switching current ratio larger than five orders of magnitude with low operating voltages. It is observed that, the existence of two conducting states, namely, low conductivity state (OFF state) and high conductivity state (ON state), exhibiting bistable behaviour. The state of the device was maintained even after removal of the applied bias, indicating the non-volatile memory. The observed current-time response showed good memory retention behaviour of the fabricated devices. The excellent stability and retention performances of hybrid device verify the reliability of this device and demonstrate their potential for application in non-volatile bistable memory device. The carrier transport mechanism of the bistable behaviour for the fabricated non-volatile organic bistable devices structures is described on the basis of the I-V experimental results by analyzing the effect of space charge and electronic structure. Interestingly, the device performance was not degraded and remains identical even after bending the device from 60-120° angles, which indicates high potential for flexible non-volatile bistable memory device applications. This demonstration provides a class of memory devices with the potential for future flexible electronics applications.

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Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film.

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Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film.

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