Drastic power factor improvement by Te doping of rare earth-free CoSb3-skutterudite thin films.
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ABSTRACT: In the present study, we have focused on the elaboration of control of Te-doped CoSb3 thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films. We have successfully synthesized sputtering targets with a reliable approach in order to obtain high-quality films with controlled stoichiometry. TE properties were then probed and revealed a reliable n-type behavior characterized by poor electrical transport properties. Tellurium substitution was realized by co-sputtering deposition and allowed obtaining a significant enhancement of the power factor with promising values of PF ≈ 0.21 mW m-1 K-2 near room temperature. It is related to the Te doping effect which leads to an increase of the See
SUBMITTER: Bourges C
PROVIDER: S-EPMC9054351 | biostudies-literature | 2020 Jun
REPOSITORIES: biostudies-literature
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