Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications.

ABSTRACT: More and more attractive applications of two-dimensional (2D) materials in nanoelectronic devices are being achieved successfully, which promotes the rapid and extensive development of new 2D materials. In this work, the structural and electronic properties of the V structure aluminum phosphide (V-AlP) monolayer are examined by density functional calculations, and its electronic properties under strain and an electric field are also explored in detail. The computation results indicate that it has good stability. Interestingly, it possesses a wide direct gap (2.6 eV), and its band gap exhibits a rich behavior depending on the strain, E-field and layer stacking. Under biaxial strain, its band gap can be tuned from 1 eV to 2.6 eV. And a direct-indirect band gap transition is found when extern

SUBMITTER: Yang X 

PROVIDER: S-EPMC9055225 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature