Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films.

ABSTRACT: In this work, we have studied the role varying nitrogen plasma compositions play in the low-temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited on Si (100) substrates using a plasma-enhanced atomic layer deposition (PE-ALD) reactor featuring a capacitively-coupled hollow-cathode plasma source. Trimethylindium (TMI) and variants of nitrogen plasma (N₂-only, Ar/N₂, and Ar/N₂/H₂) were used as the metal precursor and nitrogen co-reactant, respectively. In situ ellipsometry was employed to observe individual ligand exchange and plasma-assisted ligand removal events in real-time during the growth process. Only the samples grown under hydrogen-free nitrogen plasmas (Ar/N₂ or N₂-only) r

SUBMITTER: Ilhom S 

PROVIDER: S-EPMC9055617 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature