Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface.

ABSTRACT: Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface i.e. formation of pits and islands, whereas the composition of the as-formed heterostructure gradually changes from strontium silicide at the interface

SUBMITTER: Jovanovic Z 

PROVIDER: S-EPMC9056433 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature