Resistance state evolution under constant electric stress on a MoS₂ non-volatile resistive switching device.

ABSTRACT: MoS₂ has been reported to exhibit a resistive switching phenomenon in a vertical metal-insulator-metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) are investigated under constant voltage stress (CVS) or constant current stress (CCS) on MoS₂ resistive switching devices. Interestingly, compared with bulk transition metal oxides (TMO), MoS₂ exhibits an opposite characteristic in the fresh or pre-RESET device in the "HRS" wherein the resistance will increase to an even higher resistance after applying CVS, a unique phenomenon only accessible in 2D-based resistive switching devices. It is inferred that instead of in

SUBMITTER: Wu X 

PROVIDER: S-EPMC9057845 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature