Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration.

ABSTRACT: Improving room-temperature thermoelectric performance of p-type (Bi,Sb)₂Te₃ is essential for its practical application. However, the usual doping or alloying methods increase the carrier concentration and result in enhanced thermoelectric properties at high temperatures but not room temperature. In this work, we find that Ti is a promising dopant to shift the optimum thermoelectric properties of p-type (Bi,Sb)₂Te₃ to room temperature by reducing its carrier concentration. p-type Bi_0.5Sb_1.5-x Ti _x Te₃ samples with various Ti contents have been prepared using a simple melting method. The carrier concentration of Bi_0.5Sb_1.5-x Ti _x Te₃

SUBMITTER: Wei Z 

PROVIDER: S-EPMC9059881 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature