High-energy proton irradiation damage on two-dimensional hexagonal boron nitride.

ABSTRACT: The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance. Nano-layers of hexagonal boron nitride (h-BN) represent a promising dielectric layer in nano-electronics owing to its excellent electronic and thermal properties. In order to further analyze this technology, two-dimensional (2D) h-BN dielectric layers were exposed to high-energy proton irradiation at various proton energies and doses to intentionally introduce defective sites. A pristine h-BN capacitor showed typical degradation stages with a hard breakdown field of 10.3 MV cm^-1, while h-BN capacitors irradiated at proton energies of 5 and 10 MeV at a dose of 1 × 10¹³ cm^-2 showed lower hard breakdo

SUBMITTER: Lee D 

PROVIDER: S-EPMC9064770 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature