Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric.

ABSTRACT: Low-temperature giant-dielectric-constant thin films (In_0.0025Nb_0.0025Ti_0.995O₂) fabricated with simple radio frequency (RF) sputtering on glass substrates are employed as the gate dielectrics for thin-film transistors (TFTs) for the first time. The 380 nm-thick In_0.0025Nb_0.0025Ti_0.995O₂ film exhibited a quasi-static capacitance of as high as 36 156 nF cm^-2 with a quasi-static permittivity of 15 525 (and 7607 nF cm^-2 at 1 kHz). Indium zinc oxide (IZO) TFTs with In_0.0025Nb_0.0025Ti_0.995O₂ gate dielectrics exhibited high output current at low operation voltage and little hysteresis in the transfer curves between forward and reverse sweeps. T

SUBMITTER: Chen Z 

PROVIDER: S-EPMC9070635 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature