Resistive switching behavior in α-In₂Se₃ nanoflakes modulated by ferroelectric polarization and interface defects.

ABSTRACT: Resistive switching devices based on ferroelectric two-dimensional (2D) van der Waals (vdW) nanomaterials may display simple structures, high density, high speed, and low power consumption, and can be used in flexible electronics and highly integrated devices. However, only a few studies about the in-plane (IP) resistive switching behavior of ferroelectric 2D vdW nanomaterials have been reported because it is very hard to achieve asymmetric barriers only by tuning the IP polarization directions when the electrodes of the planar device are all of the same type. In the current work, we developed a planar device based on an α-In₂Se₃ nanoflake, in which the IP/OOP (out-of-plane) polarization, free carriers and oxygen vacancies in SiO₂ contribute to the resistiv

SUBMITTER: Hou P 

PROVIDER: S-EPMC9072215 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature