Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP₂S₆ by magnetic doping: towards electron valley-polarized transport.

ABSTRACT: Two-dimensional valleytronic systems, using the valley index of carriers to perform logic operations, serves as the basis of the next-generation information technologies. For efficient use of the valley degree of freedom, the major challenge currently is to lift the valley degeneracy to achieve valley splitting. In this work, using first-principles calculations, we propose that valley splitting can be readily achieved in a ferroelectric AgBiP₂S₆ monolayer by TM doping (TM = V, Cr, Mn, Fe, Co, and Ni), which is highly feasible in experiments. In sharp contrast to most previous reports of valley-related features in the valence band-edge, the pristine AgBiP₂S₆ monolayer has a direct band-gap located at K/K' points of the Brillouin zone

SUBMITTER: Zhang D 

PROVIDER: S-EPMC9074848 | biostudies-literature | 2022 May

REPOSITORIES: biostudies-literature