Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors.

ABSTRACT: Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. Although SiN _x is an appropriate candidate for use in the gate insulators (GIs) of high-performance driving TFTs, direct deposition of SiN _x on top of high-mobility oxide semiconductors is impossible due to significant hydrogen (H) incorporation. In this study, we used AlO _x deposited by thermal atomic layer deposition (T-ALD) as the first GI, as it has good H barrier characteristics. During the T-ALD, however, a small amount of H from H₂O can also be incorporated into the adjacent active layer. In here, we performed O₂ or N₂O plasma treatment just prior to the T-ALD proce

SUBMITTER: Ko JB 

PROVIDER: S-EPMC9075037 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature