Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors.

ABSTRACT: Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectric divinyl-tetramethyldisiloxane-bis (benzocyclobutene) (BCB) between the channel and conventional SiO₂ dielectric, to practically resolve such issues. Our results demonstrate that the electrical hysteresis in the n-channel MoS₂ and p-channel MoTe₂ transistors were significantly reduced to less than ∼20% of initial value after being treated with hydrophobic BCB dielectric while their mobilities increased by factor of two. Such improvements are certainly attribute

SUBMITTER: Yoon M 

PROVIDER: S-EPMC9077681 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature