Water assisted atomic layer deposition of yttrium oxide using tris(N,N'-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii): process development, film characterization and functional properties.

ABSTRACT: We report a new atomic layer deposition (ALD) process for yttrium oxide (Y₂O₃) thin films using tris(N,N'-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii) [Y(DPDMG)₃] which possesses an optimal reactivity towards water that enabled the growth of high quality thin films. Saturative behavior of the precursor and a constant growth rate of 1.1 Å per cycle confirm the characteristic self-limiting ALD growth in a temperature range from 175 °C to 250 °C. The polycrystalline films in the cubic phase are uniform and smooth with a root mean squared (RMS) roughness of 0.55 nm, while the O/Y ratio of 2.0 reveal oxygen rich layers with low carbon contaminations of around 2 at%. Optical properties determined via UV/Vis measurements revealed the

SUBMITTER: Mai L 

PROVIDER: S-EPMC9078035 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature