Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors.

ABSTRACT: High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices. In this work, ZnO quantum dot (QD)/Ag nanowire (NW) channel TFTs were fabricated by a solution processed method. The Ag NWs play the dual role of dopant and providing the charge transfer route, which make the channel p-type and enhance its mobility, respectively. The best sample yields an on/off ratio (I _on/I _off) of 5.04 × 10⁵, a threshold voltage (V _T) of 0.73 V, a high field effect mobility (μ _FE) of 8.69 cm² V^-1 s^-1, and a subthreshold swing (SS) of 0.41 V dec^-1. Owing to the strong ultraviolet (UV) absorption and photo-induced carrier separation ability

SUBMITTER: Wang W 

PROVIDER: S-EPMC9078542 | biostudies-literature | 2018 Feb

REPOSITORIES: biostudies-literature