Tunable graphene doping by modulating the nanopore geometry on a SiO₂/Si substrate.

ABSTRACT: A tunable graphene doping method utilizing a SiO₂/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He-Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO₂/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO₂/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO₂/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO₂/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm^-1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shift

SUBMITTER: Lim N 

PROVIDER: S-EPMC9078577 | biostudies-literature | 2018 Feb

REPOSITORIES: biostudies-literature