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Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation.

ABSTRACT: In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In₂O₃ nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In₂O₃ nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.

SUBMITTER: Coskun M

PROVIDER: S-EPMC9078917 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature

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Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation.

Coşkun Mustafa M Ombaba Matthew M MM Dumludağ Fatih F Altındal Ahmet A Islam M Saif MS

RSC advances 20180314 19

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In<sub>2</sub>O<sub>3</sub> nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and ...[more]

PMID: 35540462

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