Very fast hot carrier diffusion in unconstrained MoS₂ on a glass substrate: discovered by picosecond ET-Raman.

ABSTRACT: The currently reported optical-phonon-scattering-limited carrier mobility of MoS₂ is up to 417 cm² V^-1 s^-1 with two-side dielectric screening: one normal-κ side and one high-κ side. Herein, using picosecond energy transport state-resolved Raman (ET-Raman), we demonstrated very fast hot carrier diffusion in μm-scale (lateral) unconstrained MoS₂ (1.8-18 nm thick) on a glass substrate; this method enables only one-side normal-κ dielectric screening. The ET-Raman method directly probes the diffusion of the hot carrier and its contribution to phonon transfer without contact and additional sample preparation and provides unprecedented insight into the intrinsic D of MoS₂. The measured D values sp

SUBMITTER: Yuan P 

PROVIDER: S-EPMC9079430 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature