Diffusion doping route to plasmonic Si/SiO _x nanoparticles.

ABSTRACT: Semiconductor nanoparticles (SNPs) are a valuable building block for functional materials. Capabilities for engineering of electronic structure of SNPs can be further improved with development of techniques of doping by diffusion, as post-synthetic introduction of impurities does not affect the nucleation and growth of SNPs. Diffusion of dopants from an external source also potentially allows for temporal control of radial distribution of impurities. In this paper we report on the doping of Si/SiO _x SNPs by annealing particles in gaseous phosphorus. The technique can provide efficient incorporation of impurities, controllable with precursor vapor pressure. HRTEM and X-ray diffraction studies confirmed that obtained particles retain their nanocrystallinity. Elemental analy

SUBMITTER: Bubenov SS 

PROVIDER: S-EPMC9080633 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature