Effects of H₂ and N₂ treatment for B₂H₆ dosing process on TiN surfaces during atomic layer deposition: an ab initio study.

ABSTRACT: For the development of the future ultrahigh-scale integrated memory devices, a uniform tungsten (W) gate deposition process with good conformal film is essential for improving the conductivity of the W gate, resulting in the enhancement of device performance. As the memory devices are further scaled down, uniform W deposition becomes more difficult because of the experimental limitations of the sub-nanometer scale deposition even with atomic layer deposition (ALD) W processes. Even though it is known that the B₂H₆ dosing process plays a key role in the deposition of the ALD W layer with low resistivity and in the removal of residual fluorine (F) atoms, the roles of H₂ and N₂ treatments used in the ALD W process have not yet been reported. To unde

SUBMITTER: Park H 

PROVIDER: S-EPMC9080878 | biostudies-literature | 2018 Jun

REPOSITORIES: biostudies-literature