Annealing temperature effects on photoelectrochemical performance of bismuth vanadate thin film photoelectrodes.

ABSTRACT: The effects of annealing treatment between 400 °C and 540 °C on crystallization behavior, grain size, electrochemical (EC) and photoelectrochemical (PEC) oxygen evolution reaction (OER) performances of bismuth vanadate (BiVO₄) thin films are investigated in this work. The results show that higher temperature leads to larger grain size, improved crystallinity, and better crystal orientation for the BiVO₄ thin film electrodes. Under air-mass 1.5 global (AM 1.5) solar light illumination, the BiVO₄ thin film prepared at a higher annealing temperature (500-540 °C) shows better PEC OER performance. Also, the OER photocurrent density increased from 0.25 mA cm^-2 to 1.27 mA cm^-2 and that of the oxidation of sulfite, a hole scavenger, increased

SUBMITTER: Shi L 

PROVIDER: S-EPMC9084497 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature