Ultrasensitive detection of low-ppm H₂S gases based on palladium-doped porous silicon sensors.

ABSTRACT: In this study, the sensing properties of palladium-doped porous silicon (Pd/p-Si) substrates for low-ppm level detection of toxic H₂S gas are investigated. A Si substrate with dead-end pores ranging from nano- to macroscale was generated by a combined process of metal-assisted chemical etching (MacE) and electrochemical etching with tuned reaction time, in which nano-Pd catalysts were decorated by E-beam sputtering deposition. The sensing properties of the Pd/p-Si were enhanced as the thickness of the substrate layer increased; along with the resulting variation in surface area, this resulted in superior H₂S sensing performances in the low-ppm range (less than 3 ppm), with a detection limit of 300 ppb (sensitivity 30%) at room temperature. Furthermore, the sensor disp

SUBMITTER: Eom NSA 

PROVIDER: S-EPMC9085253 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature